Selected Journal Papers: 1999
Research Field: Low Frequency Noise in Electronic Devices
* A. Balandin, S. Morozov, G. Wijeratne, S.J. Cai, R. Li, J. Li, K.L. Wang, C.R.
Viswanathan and Yu. Dubrovskii,
"Effect of channel doping on the low-frequency
noise in GaN/AlGaN HFETs,"
Applied Physics Letters, 75: 2064 (1999)
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* A. Balandin, S. Morozov, S. Cai, R. Li, K.L. Wang, G. Wijeratne and C.R. Viswanathan,
"Low flicker-noise GaN/A1GaN heterostructure field-effect transistors for
microwave communications,"
IEEE Trans. Microwave Theory and Techniques , 47: 1413 (1999)
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* A. Balandin, K.L. Wang, A. Svizhenko, and S. Bandyopadhyay, “1/f noise
and the Hooge parameter in semiconductor quantum wires,” IEEE Trans. Electron
Devices, 46: 1240 (1999)
Research Field: Properties and Applications of Semiconductor Quantum Dots
* A. Balandin and K.L. Wang,
"Feasibility study of the quantum XOR gate based on
coupled asymmetric quantum dots,"
J. Superlattices and Microstructures , 25: 509 (1999)
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* J.L. Liu, W.G. Wu, A. Balandin, G.L. Jin and K.L. Wang, “Intersubband absorption in
boron-doped multiple Ge quantum dots,”
Applied Physics Letters, 74: 185 (1999)
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* J.L. Liu, W.G. Wu, A. Balandin, G.L. Jin, Y.H. Luo, S.G. Thomas, Y. Lu and K.L. Wang,
“Observation of intraband transitions in modulation-doped Ge quantum dots,”
Applied Physics Letters, 75: 1745 (1999)
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* Y. Dubrovskii, E.E. Vdovin, V.G. Popov, D.K. Maude, J.C. Portal, J. Maan,
K.L. Wang, A. Balandin, T.G. Anderson and S. Wang, “Resonant and correlation effects
in the tunnel structures in a high magnetic field,”
Phys. Low-Dim. Structures, 3/4: 181 (1999)
Research Field: Phonon Confinement Effects
* A. Khitun, A. Balandin and K.L. Wang,
“Modification of the thermal conductivity in
silicon quantum wires due to spatial confinement of acoustic phonons,”
J. Superlattices and Microstructures, 26: 181 (1999)
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Contact group members for the reprints of other relevant papers.
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